Contact etching utilizing multi-layer hard mask

ABSTRACT

A method for forming contact holes using a multi-layer hard mask. A substrate with a device region and an alignment region having an opening therein to serve as an alignment mark is provided. A dielectric layer is formed overlying the substrate and fills the opening, followed by the multi-layer hard mask. The multi-layer hard mask over the opening is partially removed and that on the device region is patterned to form a plurality of holes therein and expose the underlying dielectric layer. The exposed dielectric layer on the device region is etched to form the plurality of contact holes therein.

BACKGROUND

The present invention relates to a semiconductor process and inparticular to fabrication of a semiconductor device using a multi-layerhard mask.

The increasing demand for highly integrated and high-performancesemiconductor devices has fueled the need for advances in integratedcircuit manufacturing technology. To produce an integrated circuit withhigh integration density, the sizes of semiconductor devices andinterconnects must be narrowed. Lithography and etching must beperformed to form trenches and contact holes in the dielectric layerprior to the formation of the interconnects. Thereafter, the trenchesand contact holes are filled with a metal layer and followed bypolishing to complete the fabrication. This is a typical damasceneprocess in semiconductor manufacturing technology. In a common etchingtechnique used to form openings, such as trenches or contact holes, in atarget layer on a substrate, a photoresist pattern is formed on thetarget layer to serve as an etch mask. Since the thickness of thephotoresist pattern can dictate the etching rate, the photoresistpattern must be thick if the contact holes are to be very small.

A photoresist layer having a thickness of 3000 Å or more, however, isnot sensitive to the light used for lithography. That is, it isdifficult to form a contact hole with a small critical dimension using aphotoresist layer as an etch mask. Accordingly, the fabrication of acontact hole with small critical dimension using a polysilicon layer asan etch mask has been widely employed.

FIG. 1 is a cross-section showing a conventional semiconductor devicefabricated using a single polysilicon hard mask. The semiconductordevice comprises a substrate 100, an interlayer dielectric (ILD) layer112, a polysilicon hard mask 114, a barrier layer 116, and a metal layer118. The substrate 100 comprises a device region 10 and an alignmentregion 20, in which the device region 10 has a plurality of gatestructures 107 formed thereon and the alignment region 20 has an opening101 formed in the substrate 100 to serve as an alignment mark (AM). Thegate structure 107 comprises a gate dielectric layer 102, a gateelectrode 104, and a gate spacer 106. The ILD layer 112 overlies thesubstrate 100, and the portion thereof over the device region 10 has abit line contact hole (C_(B)) 113 a, a gate contact hole (C_(G)) 113 b,and a substrate contact hole (C_(S)) 113 c therein. The portion of ILDlayer 112 on the alignment region 20 has an opening therein to exposethe opening 101. The polysilicon hard mask 114 is disposed on the ILDlayer 112 and the portion thereof over the device region 10 has aplurality of holes to expose the bit line contact hole 113 a, the gatecontact hole 113 b, and the substrate contact hole 113 c and that theportion over the alignment region 20 has an opening therein to exposethe opening (alignment mark) 101. The barrier layer 116 comprisingtitanium nitride, is conformably disposed on the polysilicon hard mask114 and the inner surfaces of the contact holes 113 a, 113 b, and 113 cand the opening 101. The metal layer 118, such as a tungsten layer, isconformably formed on the barrier layer 116 and the opening 101 andfills the contact holes 113 a, 113 b, and 113 c.

During the fabrication of this semiconductor device, the alignment mark101 on the alignment region 20 may fail due to light strongly reflectedfrom the thicker polysilicon hard mask 114. That is, it is difficult todefine the contact holes 113 a, 113 b, and 113 c during lithography. Inorder to solve this problem, the polysilicon hard mask 114 over thealignment mark 101 must be removed prior to definition of the contactholes 113 a, 113 b, and 113 c. As a result, a deeper and wider openingis formed by removing the ILD layer 112 over the alignment mark 101during definition of the contact holes 113 a, 113 b, and 113 c. As thesubsequent metal layer 118 is filled for the fabrication of contactplugs, the deeper and wider opening cannot be completely filled with themetal layer 118. The metal layer 118, however, is conformably formed onthe inner surface of the opening. A dishing effect occurs duringplanarization by chemical mechanical polishing (CMP). As a result, themetal layer 118 adjacent to the alignment mark 118 is disconnected, asdepicted by the arrows 119 shown in FIG. 1, thus reducing devicereliability.

SUMMARY

An embodiment of the invention provides a method for forming contactholes using a multi-layer hard mask. A substrate with a device regionand an alignment region having an opening therein to serve as analignment mark is provided. A dielectric layer is formed overlying thesubstrate and fills the opening. A first polysilicon layer, a siliconoxide layer, and a second polysilicon layer are successively formedoverlying the dielectric layer to serve as the multi-layer hard mask.The second polysilicon layer over the opening on the alignment region isremoved to expose the underlying silicon oxide layer. The multi-layerhard mask on the device region is patterned to form a plurality of holestherein and expose the underlying dielectric layer. The exposeddielectric layer and the silicon oxide layer over the opening is etchedusing the patterned multi-layer hard mask as an etch mask, to form theplurality of contact holes in the dielectric layer on the device regionand expose the first polysilicon layer over the opening on the alignmentregion.

The first polysilicon layer has a thickness less than the secondpolysilicon layer. Moreover, the contact hole may comprise a bit linecontact hole, a gate contact hole, or a substrate contact hole.

An embodiment of the invention also provides a semiconductor devicefabricated using a multi-layer hard mask. The device comprises asubstrate, a dielectric layer, a first polysilicon layer, a siliconoxide layer, a second polysilicon layer, a barrier layer, and a metallayer. The substrate has a device region and an alignment region, inwhich the alignment region has a first opening therein to serve as analignment mark. The dielectric layer overlies the substrate and fillsthe first opening, wherein the dielectric layer on the device region hasa plurality of contact holes therein. The first polysilicon layer, thesilicon oxide layer, and the second polysilicon layer are successivelydisposed on the dielectric layer to serve as the multi-layer hard mask,wherein the multi-layer hard mask on the device region has a pluralityof holes therein to expose the contact holes and the multi-layer hardmask over the first opening on the alignment region has a second openingtherein to expose the first polysilicon layer. The barrier layer isconformably disposed on the multi-layer hard mask and the inner surfacesof the contact holes and the second opening. The metal layer is disposedon the barrier layer and fills the contact holes and the second opening.

The first polysilicon layer has a thickness less than the secondpolysilicon layer. Moreover, the contact hole may comprise a bit linecontact hole, a gate contact hole, or a substrate contact hole.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will become more fully understood from thedetailed description given hereinbelow and the accompanying drawings,given by way of illustration only and thus not intended to be limitativeof the invention.

FIG. 1 is a cross-section of a conventional semiconductor devicefabricated using a single polysilicon hard mask.

FIGS. 2A to 2E are cross-sections showing a method for forming contactplugs using a multi-layer hard mask of an embodiment of the invention.

DETAILED DESCRIPTION

First, in FIG. 2A, a substrate 200 for the fabrication of asemiconductor memory device is provided. For example, the substrate 200may be a silicon substrate or other semiconductor substrates. In thisembodiment, the substrate 200 has a device region 30, such as an arrayregion or peripheral circuit region, and an alignment region 40. Thedevice region 30 has a plurality of gate structures 207 formed thereonand the alignment region 40 has an opening 201 therein to serve as analignment mark (AM). Moreover, the gate structure 207 comprises a gatedielectric layer 202, a gate electrode 204, and a gate spacer 206.

Next, in FIG. 2B, a dielectric layer 212 is deposited overlying thesubstrate 200 to serve as an interlayer dielectric (ILD) layer, whichcovers the gate structures 207 on the device region 30 and fills theopening 201 on the alignment region 40. The ILD layer 212 may be asingle layer or multiple layers. For example, the ILD layer 212 maycomprise a borophosphosilicate glass (BPSG) layer and a tetraethylorthosilicate (TOES) oxide layer. In this embodiment, the ILD layer 212is formed by the following steps. First, a BPSG layer 208 blankly coversthe gate structures 207 on the device region 30 and fills the opening201 on the alignment region 40. Next, the excess BPSG layer 208 over thegate structures 207 is removed by chemical mechanical polishing (CMP).Thereafter, a TEOS oxide layer 210 is formed on the polished BPSG layer208 by conventional deposition, such as chemical vapor deposition (CVD).

As mentioned above, if the polysilicon hard mask is too thick, thealignment mark for subsequent lithography may fail due to light stronglyreflected from the hard mask. Conversely, if the polysilicon hard maskis not thick enough, the subsequent etching may suffer. Accordingly, akey feature of this embodiment is to successively form a firstpolysilicon layer 214, a silicon oxide layer 216, and a secondpolysilicon layer 218 overlying the ILD layer 212 to serve as amulti-layer hard mask 220 for subsequent etching. The first and secondpolysilicon layers 214 and 218 may be formed by conventional deposition,such as CVD. Moreover, the first polysilicon layer 214 has a thicknessless than the second polysilicon layer 218. For example, the firstpolysilicon layer 214 has a thickness of about 300 to 500 Å and thesecond polysilicon layer 218 has a thickness of about 400 to 600 Å.Moreover, the silicon oxide layer 216 may be formed by thermal oxidationor CVD, which has a thickness of about 100 to 200 Å. Next, a photoresistpattern layer 222 is formed on the multi-layer hard mask 220, which hasan opening 223 therein to expose the second polysilicon layer 218 overthe opening 201 on the alignment region 40.

Next, in FIG. 2C, the second polysilicon layer 218 under the opening 223is removed to form an opening 219 over the alignment mark 201 and exposethe underlying silicon oxide layer 216. The photoresist pattern layer222 which is no longer needed is subsequently removed. The thickness ofthe multi-layer hard mask 220 over the alignment mark 201 is reduced dueto the removal of the second polysilicon layer 218. Accordingly, thestrongly reflected light can be prevented during subsequent lithographyfor the definition of contact holes.

Thereafter, another photoresist pattern layer 224 is formed on themulti-layer hard mask 220, which has a plurality of holes 221 a, 221 b,and 221 c therein and on the device region 30. Next, the multi-layerhard mask 220 is patterned by etching using the photoresist patternlayer 224 as an etch mask, thereby transferring the holes 221 a, 221 b,and 221 c into the multi-layer hard mask 220 to expose the underlyingILD layer 212 for subsequent contact etching. For example, the hole 221a is used for the definition of a bit line contact hole (C_(B)). Thehole 221 b is used for the definition of a gate contact hole (C_(G)).The hole 221 c is used for the definition of a substrate contact hole(C_(S)).

Next, in FIG. 2D, after removing of the photoresist pattern layer 224,the exposed ILD layer 212 on the device region 30 is etched using thepatterned multi-layer hard mask 220 as an etch mask to form a bit linecontact hole 225 a, a gate contact hole 225 b, and a substrate contacthole 225 c. At the same time, the silicon oxide layer 216 over theopening (alignment mark) 201 on the alignment region 40 is also removedto expose the underlying first polysilicon layer 214. The ILD layer 212over and in the alignment mark 201 is not etched due to the protectionof the first polysilicon layer 214 covered thereon. As a result, thestep height on the alignment region 40 can be reduced when thesubsequent metal layer is deposited thereon.

Finally, in FIG. 2E, a barrier layer 226 comprising, for example,titanium and titanium nitride, is conformably formed on the patternedmulti-layer hard mask 220 and the inner surfaces of the contact holes225 a, 225 b, 225 c and the opening 219. Thereafter, a metal layer 228,such as a tungsten layer, is formed on the barrier layer 226 and fillsthe contact holes 225 a, 225 b, 225 c and the opening 219 to completethe fabrication of the contact plugs. The metal layer 228 issubsequently planarized by CMP. Since the step height on the alignmentregion 40 is reduced, the dishing effect can be prevented when the metallayer 228 is planarized, thereby preventing disconnection of the metallayer 228 adjacent to the alignment mark 201 on the alignment region 40.

FIG. 2E also illustrates a semiconductor device fabricated using amulti-layer hard mask of an embodiment of the invention. Thesemiconductor device comprises a substrate 200, an ILD layer 212, afirst polysilicon layer 214, a silicon oxide layer 216, a secondpolysilicon layer 218, a barrier layer 226, and a metal layer 228. Thesubstrate has a device region 30 and an alignment region 40, in whichthe device region 30 has a plurality of gate structures 207 formedthereon and the alignment region 40 has an opening 201 therein to serveas an alignment mark (AM). Moreover, the gate structure 207 comprises agate dielectric layer 202, a gate electrode 204, and a gate spacer 206.The ILD layer 212 overlies the substrate 200 and fills the opening 201,in which the ILD layer 212 on the device region 30 has a bit linecontact hole 225 a, a gate contact hole 225 b, and a substrate contacthole 225 c therein. Moreover, the ILD layer 212 may comprise aborophosphosilicate glass (BPSG) layer and a tetraethyl orthosilicate(TOES) oxide layer. The first polysilicon layer 214, the silicon oxidelayer 216, and the second polysilicon layer 218 are successivelydisposed on the ILD layer 212 to serve as the multi-layer hard mask 220,in which the multi-layer hard mask 220 on the device region 30 has aplurality of holes therein to expose the bit line contact hole 225 a,the gate contact hole 225 b, and the substrate contact hole 225 c.Moreover, the multi-layer hard mask 220 over the opening (alignmentmark) 201 on the alignment region 40 has another opening 219 therein toexpose the first polysilicon layer 214. In this embodiment, the firstpolysilicon layer 214 has a thickness less than the second polysiliconlayer 218. For example, the first polysilicon layer 214 has a thicknessof about 300 to 500 Å and the second polysilicon layer 218 has athickness of about 400 to 600 Å. Moreover, the silicon oxide layer 216has a thickness of about 100 to 200 Å. The barrier layer 226 comprising,for example, titanium and titanium nitride, is conformably disposed onthe multi-layer hard mask 220 and the inner surfaces of the contactholes 225 a, 225 b, and 225 c and the opening 219. The metal layer 228,such as a tungsten layer, is disposed on the barrier layer 226 and fillsthe contact holes 225 a, 225 b, and 225 c and the opening 219.

According to embodiments of the invention, the thickness of themulti-layer hard mask 220 over the alignment mark 201 can be reduced,eliminating the strongly reflected light from the hard mask 220 toimprove lithography during the contact-definition. Moreover, since thestep height of the metal layer 228 on the alignment region 40 is reducedby the partially recessed multi-layer hard mask 220, the disconnectionof the metal layer 228 adjacent to the alignment mark 201 can beprevented after planarization.

While the invention has been described by way of example and in terms ofthe preferred embodiments, it is to be understood that the invention isnot limited to the disclosed embodiments. To the contrary, it isintended to cover various modifications and similar arrangements (aswould be apparent to those skilled in the art). Therefore, the scope ofthe appended claims should be accorded the broadest interpretation toencompass all such modifications and similar arrangements.

1. A method for forming contact holes using a multi-layer hard mask,comprising: providing a substrate with a device region and an alignmentregion having an opening therein to serve as an alignment mark; forminga dielectric layer overlying the substrate and filling the opening;successively forming a first polysilicon layer, a silicon oxide layer,and a second polysilicon layer overlying the dielectric layer to serveas the multi-layer hard mask; removing the second polysilicon layer overthe opening on the alignment region to expose the underlying siliconoxide layer; patterning the multi-layer hard mask on the device regionto form a plurality of holes therein and expose the underlyingdielectric layer; and etching the exposed dielectric layer and thesilicon oxide layer over the opening using the patterned multi-layerhard mask as an etch mask, to form the plurality of contact holes in thedielectric layer on the device region and expose the first polysiliconlayer over the opening on the alignment region.
 2. The method as claimedin claim 1, wherein the dielectric layer comprises borophosphosilicateglass or a tetraethyl orthosilicate oxide.
 3. The method as claimed inclaim 1, wherein the first polysilicon layer has a thickness less thanthe second polysilicon layer.
 4. The method as claimed in claim 3,wherein the thickness of the first polysilicon layer is about 300 to 500Å and that of the second polysilicon layer is about 400 to 600 Å.
 5. Themethod as claimed in claim 1, wherein the silicon oxide layer has athickness of about 100 to 200 Å.
 6. The method as claimed in claim 1,wherein the contact hole comprises a bit line contact hole, a gatecontact hole, or a substrate contact hole.
 7. The method as claimed inclaim 1, further comprising: conformably forming a barrier layeroverlying the multi-layer hard mask and the inner surfaces of thecontact holes on the device region and overlying the first polysiliconlayer on the alignment region; forming a metal layer on the barrierlayer and filling the contact holes; and planarizing the metal layer. 8.The method as claimed in claim 7, wherein the barrier layer comprisestitanium and titanium nitride.
 9. The method as claimed in claim 7,wherein the metal layer comprises tungsten.
 10. The panel as claimed inclaim 7, wherein the metal layer is planarized by chemical mechanicalpolishing.
 11. A semiconductor device fabricated using a multi-layerhard mask, comprising: a substrate with a device region and an alignmentregion having a first opening therein to serve as an alignment mark; adielectric layer overlying the substrate and filled in the firstopening, wherein the dielectric layer on the device region has aplurality of contact holes therein; a first-polysilicon layer, a siliconoxide layer, and a second polysilicon layer successively disposed on thedielectric layer to serve as the multi-layer hard mask, wherein themulti-layer hard mask on the device region has a plurality of holestherein to expose the contact holes and the multi-layer hard mask overthe first opening on the alignment region has a second opening thereinto expose the first polysilicon layer; a barrier layer conformablydisposed on the multi-layer hard mask and the inner surfaces of thecontact holes and the second opening; and a metal layer disposed on thebarrier layer and filling the contact holes and the second opening. 12.The device as claimed in claim 11, wherein the dielectric layercomprising a borophosphosilicate glass or a tetraethyl orthosilicateoxide.
 13. The device as claimed in claim 11, wherein the firstpolysilicon layer has a thickness less than the second polysiliconlayer.
 14. The device as claimed in claim 11, wherein the thickness ofthe first polysilicon layer is about 300 to 500 Å and that of the secondpolysilicon layer is about 400 to 600 Å.
 15. The device as claimed inclaim 11, wherein the silicon oxide layer has a thickness of about 100to 200 Å.
 16. The device as claimed in claim 11, wherein the contacthole comprises a bit line contact hole, a gate contact hole, or asubstrate contact hole.
 17. The device as claimed in claim 11, whereinthe barrier layer comprises titanium and titanium nitride.
 18. Thedevice as claimed in claim 11, wherein the metal layer comprisestungsten.